Optimization of the properties of MOVPE-grown GaP epitaxial layers on GaP (1 1 1)B substrates-Reference-Cited by-同舟云学术

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Optimization of the properties of MOVPE-grown GaP epitaxial layers on GaP (1 1 1)B substrates

Published:2008-05-29 Issue:7 Volume:23 Page:075031
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Sharma T K,Dixit V K,Ganguli Tapas,Singh S D,Porwal S,Kumar R,Tiwari P,Nath A K

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference35 articles.

1. Gallium phosphide electroluminescence

2. GaP RED ELECTROLUMINESCENT DIODES WITH AN EXTERNAL QUANTUM EFFICIENCY OF 7%

3. Nitrogen-doped gallium phosphide nanowires

4. White light-emitting diodes based on a single InGaN emission layer

5. Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the properties of GaP supersaturated with Ti;Journal of Alloys and Compounds;2020-04

2. Growth of GaP and AlGaP on GaP(1 1 1)B using gas-source molecular-beam-epitaxy;Journal of Crystal Growth;2017-11

3. Coexistence of type-I and type-II band alignment in Ga(Sb, P)/GaP heterostructures with pseudomorphic self-assembled quantum dots;JETP Letters;2014-03

4. Effect of two-step growth process on structural, optical and electrical properties of MOVPE-grown GaP/Si;Journal of Crystal Growth;2008-07

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