Modulated-beam mass spectrometry studies of the MOMBE growth of (100) GaAs and In0.1Ga0.9As
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Chemical Beam Epitaxy
2. From chemical vapor epitaxy to chemical beam epitaxy
3. Gas source molecular beam epitaxy of InP, GaInAs and GaInAsP
4. Solid State Devices 1986;Lüth,1987
5. Substrate temperature dependence of GaAs, GaInAs, and GaAlAs growth rates in metalorganic molecular beam epitaxy
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