Evidence for selective delocalization of N-pair states in diluteGaAs1−xNx
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.035336/fulltext
Reference58 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Direct determination of electron effective mass in GaNAs/GaAs quantum wells
3. Band Anticrossing in GaInNAs Alloys
4. Effect of nitrogen on the band structure of GaInNAs alloys
5. Theory of Substitutional Deep Traps in Covalent Semiconductors
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3. Pressure dependence of the band gap energy for the dilute nitride GaNxAs1−x;Materials Science-Poland;2016-12-01
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