Intense photoluminescence from Si-based quantum well structures with neighboring confinement structure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. High‐temperature operation of strained Si0.65Ge0.35/Si(111)p‐type multiple‐quantum‐well light‐emitting diode grown by solid source Si molecular‐beam epitaxy
2. GexSi1−xstrained‐layer superlattice waveguide photodetectors operating near 1.3 μm
3. Thin-film thermo-optic GexSi_1−x Mach–Zehnder interferometer
4. Strained Si1−xGex multi‐quantum well waveguide structures on (110) Si
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1. Optical Properties of Strain-Balanced Si0.73Ge0.27Planar Microcavities on Si Substrates;Japanese Journal of Applied Physics;2002-04-30
2. Fabrication of strain-balanced Si0.73Ge0.27/Si-distributed Bragg reflectors on Si substrates for optical device applications;Physica E: Low-dimensional Systems and Nanostructures;2002-03
3. Er doping of Si and Si0.88Ge0.12 using Er2O3 and ErF3 evaporation during molecular beam epitaxy A transmission electron microscopy study;Journal of Crystal Growth;1999-01
4. New strain-relieving microstructure in pure-Ge/Si short-period superlattices;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-05
5. Type II Band Alignment inSi1−xGex/Si(001)Quantum Wells: The Ubiquitous Type I Luminescence Results from Band Bending;Physical Review Letters;1997-07-14
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