Formation of buried a-Si/Al/Si, a-Si/Sb/Si and a-Si/B/Si interfaces and their electrical properties
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Growth and characterization of a delta‐function doping layer in Si
2. Growth and characterization of atomic layer doping structures in Si
3. P-type delta doping in silicon MBE
4. Solid phase epitaxial growth of Si on SiSb surface phases for the formation of δ-doped layers and δiδi-superlattices
5. Quantized states in delta-doped Si layers
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Stability and electric conductivity of Si-metal surface reconstructions during amorphous Si deposition;Applied Surface Science;2004-10
2. Self assembling growth of triangular pyramidal ge islands on a Si(111)–×–R30°–B surface phase;Applied Surface Science;2000-08
3. The formation of silicon (111) boron surface phases and their influence on the epitaxial growth of silicon and germanium;Thin Solid Films;2000-07
4. Hydrogen interaction with clean and modified silicon surfaces;Surface Science Reports;1999-10
5. Electrical properties of buried B/Si surface phases;Journal of Applied Physics;1998-06
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