Electrical properties of buried B/Si surface phases
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367447
Reference37 articles.
1. Growth and characterization of a delta‐function doping layer in Si
2. Controlled Atomic Layer Doping and ALD MOSFET Fabrication in Si
3. CORRELATION BETWEEN ATOMIC-SCALE STRUCTURES AND MACROSCOPIC ELECTRICAL PROPERTIES OF METAL-COVERED Si(111) SURFACES
4. Stability of surface reconstructions on silicon during RT deposition of Si submonolayers
5. Stability of boron‐ and gallium‐induced surface structures on Si(111) during deposition and epitaxial growth of silicon
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Limits on Thinning of Boron Layers With/Without Metal Contacting in PureB Si (Photo)Diodes;IEEE Electron Device Letters;2019-06
2. Films by Molecular-Beam Epitaxy;Silicon;2004
3. Ultradense phosphorous delta layers grown into silicon from PH3 molecular precursors;Applied Physics Letters;2002-03-04
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