Optical properties of thermally interdiffused MBE-grown GaAs/GaAlAs quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Interdiffusion between GaAs and AlAs
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3. Wavelength modification of AlxGa1−xAs quantum well heterostructure lasers by layer interdiffusion
4. Wavelength modification (Δℏω=10–40 meV) of room temperature continuous quantum‐well heterostructure laser diodes by thermal annealing
5. Kinetics of implantation enhanced interdiffusion of Ga and Al at GaAs‐GaxAl1−xAs interfaces
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1. The III-V Materials for Infra-Red Devices;Materials for Optoelectronics;1996
2. Thermally induced change in the profile of GaAs/AlGaAs quantum wells;Materials Science and Engineering: B;1994-12
3. Interdiffusion process in lattice-matchedInxGa1−xAsyP1−y/InP and GaAs/AlxGa1−xAs quantum wells;Physical Review B;1994-07-15
4. Calculation of the ground-state energies in intermixed GaAs/AlxGa1−xAs cylindrical quantum dots;Physical Review B;1994-03-15
5. Non-destructive approaches to interdiffusion phenomena across GaInAs/GaInAsP interfaces: photoluminescence vs. Raman;Materials Science and Engineering: B;1993-06
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