Doping properties of Ge on GaAs (100) grown by MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference4 articles.
1. Nucleation and growth of GaAs on Ge and the structure of antiphase boundaries
2. Diffusion of As and Ge during growth of GaAs on Ge substrate by molecular‐beam epitaxy: Its effect on the device electrical characteristics
3. On the adjustability of the “abrupt” heterojunction band-gap discontinuity
4. Proc. 1st Intern. Symp. on Si-MBE;Aizaki,1985
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