Diffusion of As and Ge during growth of GaAs on Ge substrate by molecular‐beam epitaxy: Its effect on the device electrical characteristics
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336790
Reference16 articles.
1. Experiments on Ge-GaAs heterojunctions
2. Effect of Crystal Orientation on Ge‐GaAs Heterojunctions
3. nGepGaAs Heterojunctions
4. Electrical Transport in nGe-pGaAs Heterojunctions†
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