Atomic layer epitaxy of ZnSe-ZnTe strained layer superlattices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Summary Abstract: High quality p–n junctions in InGaAs/GaAs strained-layer superlattices
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3. Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy
4. Photoluminescence characteristics of AlGaAs‐GaAs single quantum wells grown by migration‐enhanced epitaxy at 300 °C substrate temperature
5. Improved flatness in GaAs/AlGaAs heterointerfaces grown by flow‐rate modulation epitaxy
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1. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends;Journal of Applied Physics;2013-01-14
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