Some observations on the dislocation etching of GaAs1-χPχ epitaxial layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Dislocations and their Relation to Irregularities in Zinc‐Diffused GaAsP p‐n Junctions
2. Compositional Inhomogeneities in GaAs1−xPx Alloy Epitaxial Layers
3. Dislocation morphology in graded heterojunctions: GaAs1?xPx
4. Etch Pits in Gallium Arsenide
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. References;Thin Films by Chemical Vapour Deposition;1990
2. Electron Microscope Studies Of Vpe Gainas Layer Structures Suitable For Use As Infrared Leds;Journal of Microscopy;1980-01
3. Some morphological studies for optimum growth conditions of vapor epitaxial GaAs1-xPx;Journal of Crystal Growth;1974-01
4. A dislocation „etch-memory” effect in gallium arsenide;Physica Status Solidi (a);1973-05-16
5. Thermochemical calculations of the system AsH3PH3HClGaH2 for GaAsP vapour growth;Physica Status Solidi (a);1973-05-16
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