Some morphological studies for optimum growth conditions of vapor epitaxial GaAs1-xPx
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONS
2. A high speed current-limiting device from GaAsxP1-x
3. The Epitaxial Growth of GaP by a Ga[sub 2]O Vapor Transport Mechanism
4. Preparation of GaAs[sub x]P[sub 1−x] by Vapor Phase Reaction
5. The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and Phosphine
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2. Self-organized LPE growth of Al<formula><inf><roman>0.3</roman></inf></formula>Ga<formula><inf><roman>0.7</roman></inf></formula>As microtips for integrated SNOM sensors;SPIE Proceedings;2002-09-05
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5. Epitaxial growth of AIIIBV semiconductors from vapour phase;Acta Physica Academiae Scientiarum Hungaricae;1978-01
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