OMVPE of GaInAs on a spinning substrate
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Low pressure metalorganic chemical vapor deposition of InP and related compounds
2. Growth of multiple thin layer structures in the GaAs-AlAs system using a novel VPE reactor
3. Proc. 12th Intern. Symp. on GaAs and Related Compounds;Cox,1986
4. In situ characterization of MOCVD growth processes by light scattering techniques
5. Instrumental aspects of atmospheric pressure MOVPE growth of InP and InP: GaInAsP heterostructures
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. GaInP multiwafer growth by LP-MOVPE for HBTs, lasers, LEDs or solar cells;Journal of Crystal Growth;1992-11
2. Numerical study of the influence of reactor design on MOCVD with a comparison to experimental data;Journal of Crystal Growth;1991-06
3. III–V Technology: The Key for Advanced Devices;Journal of The Electrochemical Society;1989-09-01
4. A novel MOVPE reactor with a rotating substrate;Journal of Crystal Growth;1988
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