Gettering properties of PrO2 in In0.53Ga0.47As LPE growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Incorporation of erbium in GaAs by liquid‐phase epitaxy
2. MOVPE grown InP:Yb layers using Yb(IpCp)3 as a new doping source
3. Growth and properties of low-doped In0.53Ga0.47As LPE layers using rare-earth oxides
4. Lpe growth of high purity InP and N- and P-In0.53Ga0.47As
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2. Effect of Fe inter‐diffusion on properties of InP layers grown with addition of RE elements;physica status solidi (c);2005-03
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4. Correlation of Pr, Dy, and Tb addition with physical properties of InP layers prepared by liquid phase epitaxy;physica status solidi (c);2003-02
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