Performance of lead iodide nuclear radiation detectors with the introduction of rare earth elements-Reference-Cited by-同舟云学术

Performance of lead iodide nuclear radiation detectors with the introduction of rare earth elements

Published:2006-03-01 Issue:1 Volume:4 Page:117-123
ISSN:2391-5471
Container-title:Open Physics
language:
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Author:

Hassan Mahmoud¹,Matuchova Marie²,Zdansky Karel²

Affiliation:

1. 1Electronics Engineering Department, Princess Sumaya University, RSS Str., P O Box 1438, Al-Jubaiha, 11941, Jordan

2. 2Institute of Radio Engineering and Electronics, Czech Academy of Science, Chaberska 57, 182 51, Praha, Czech Republic

Abstract

AbstractLead iodide has been recognized as a promising material for room temperature radiation detectors. It has a wide band-gap (∼ 2.3 eV), high atomic numbers (82, 53) and it is environmentally very stable compared to mercuric iodide. Electrical and optical properties of lead iodide grown crystals purified under the influence of selected rare earth elements have been investigated. Photo-luminescence and capacitance-voltage measurements have been performed using different rare earth elements.

Publisher

Walter de Gruyter GmbH

Subject

General Physics and Astronomy

Link

https://www.degruyter.com/downloadpdf/journals/phys/4/1/article-p117.xml

Reference12 articles.

1. J. Novák, S Hasenöhrl, M. Kuliffayová and J. Oswald: “Gettering properties of PrO2 in In0.53Ga0.47As LPE growth”, J. Cryst. Growth, Vol. 110, (1991), pp. 862–866.

2. B. Põdör, L. Csontos, K. Somogyi and D. Vignaud: “Photoluminescence and double crystal X-ray study of InGaAs/InP: Effect of rare earth (dysprosium) doping during growth”, Acta Phys. Pol. A, Vol. 87, (1995), pp. 465–468.

3. A. Steckl, J. Heikenfeld, Lee Dong-Seon, M. Garter, C. Baker, W. Yongqiang and R. Jones: “Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices”, IEEE J. Sel. Top. Quant., Vol. 8, (2002), pp. 749–766.

4. P. Favennec, H. Lapos-Haridon, M. Salvi, D. Moutonnet and Y. Le Guillou: “Luminescence of erbium implanted in various semiconductors IV, III-V and II-VI materials”, Electron. Lett., Vol. 25, (1989), pp. 718–719.

5. I. Bolshakova, P. Koptsev, I. Melnyk, T. Moskovets, S. Krukovsky and D. Zayachuk: “Control of Parameters of III-V Compound Microcrystals and Epitaxial Layers by means of Complex Doping”, Cryst. Res. Technol., Vol. 36, (2001), pp. 989–996.

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