Tilting of lattice planes in InP epilayers grown on miscut GaAs substrates: the effect of initial growth conditions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Structure of vapor‐deposited GaxIn1−xAs crystals
2. X-ray diffraction effects in Ga and Al arsenide structures MBE-grown on slightly misoriented GaAs (001) substrates
3. Lattice misfit and relative tilt of lattice planes in semiconductor heterostructures
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2. Structural and optical studies of strain relaxation in Ge1−xSnx layers grown on Ge/Si(001) by molecular beam epitaxy;Thin Solid Films;2016-08
3. Laboratory-based characterization of heteroepitaxial structures: Advanced experiments not needing synchrotron radiation;Powder Diffraction;2010-06
4. X-ray characterization of epi-Ge/Pr2 O3 /Si(111) layer stacks by pole figures and reciprocal space mapping;physica status solidi (a);2009-06-22
5. An X‐ray diffraction study of the structural properties of thick relaxed (100) InGaAs/GaAs heterostructures;physica status solidi (c);2005-03
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