Epitaxial growth of AlGa1−As by low-pressure MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Growth of high-purity GaAs epilayers by MOCVD and their applications to microwave MESFET's
2. Proc. 9th Intern. Symp. on GaAs and Related Compounds;Mori,1982
3. The effects of the growth temperature on AlxGal-xAs (0≤ x ≤0.37) LED materials grown by OM-VPE
4. High purity GaAs prepared from trimethylgallium and arsine
5. Proc. 10th Intern. Symp. on GaAs and Related Compounds;Shealy,1983
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1. Specific Materials;Organometallic Vapor-Phase Epitaxy;1999
2. Surface defects of GaAs epitaxial layers grown by low-pressure OMVPE;Journal of Crystal Growth;1992-09
3. Epitaxy of wide band gap III–V materials by MOVPE and MBE;III-V Microelectronics;1991
4. MOCVD of AlGaAs/GaAs with novel group III compounds;Journal of Electronic Materials;1990-04
5. Low-pressure organometallic epitaxy of the III–V compounds;Progress in Solid State Chemistry;1989-01
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