Dislocation-free GaAs by the liquid encapsulation technique-Reference-Cited by-同舟云学术

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Dislocation-free GaAs by the liquid encapsulation technique

Published:1972-05 Issue: Volume:13-14 Page:635-639
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Grabmaier B.C,Grabmaier J.G

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. FSDERC;Mettler,1971

2. Notizen: Herstellung von InAs- und GaAs-Einkristallen

3. Liquid encapsulation techniques: The use of an inert liquid in suppressing dissociation during the melt-growth of InAs and GaAs crystals

4. Crystal Growth;Steinemann,1967

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on dislocation multiplication in the head of Germanium single crystal;Rare Metals;2006-12

2. Raman microprobe: a non-destructive tool for studying local misorientations in GaAs;Materials Letters;1991-10

3. Atomic structure of twins in GaAs;Applied Physics Letters;1990-07-23

4. Chapter 1 Growth of Dislocation-free InP;Semiconductors and Semimetals;1990

5. Melt-Growth of Iii–V Compounds by the Liquid Encapsulation and Horizontal Growth Techniques;Materials Processing: Theory and Practices;1989

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