Chapter 1 Growth of Dislocation-free InP-Reference-Cited by-同舟云学术

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Chapter 1 Growth of Dislocation-free InP

Published:1990 Issue: Volume: Page:1-35
ISSN:0080-8784
Container-title:Semiconductors and Semimetals
language:
Short-container-title:

Author:

Farges J.P.

Publisher

Elsevier

Reference67 articles.

1. Etching of Dislocation on the Low-index Face of GaAs;Abraham;J. Appl. Phys.,1965

2. Antypas, G. (1987a). Private communication.

3. Antypas, G. (1987b). Private communication.

4. Theoretical studies of the temperature distribution in a crystal being grown by the Czochralski method;Arizumi;J. Crystal Growth,1972

5. Phase equilibria and Vapor Pressures of pure Phosphorus and of the Indium/Phosphorus System and their implications regarding crystal growth of InP;Bachman;J. Electrochem. Soc.,1974

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1. Chapter 7 Stoichiometric Defects in InP;Semiconductors and Semimetals;1990

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