Gas source molecular beam epitaxy growth of GaP/AlP short period superlattices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Optical properties and indirect-to-direct transition of GaP/AlP (001) superlattices
2. Gas source molecular beam epitaxy growth of short period GaP/AlP(001) superlattices
3. GaAs and Related Compounds 1992;Asahi,1993
4. Photoluminescence and electroreflectance of GaP/AlP superlattices grown by gas source MBE
5. Optical properties of GaP/AlP short‐period superlattices grown by gas source molecular beam epitaxy
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2. All-out band structure and band offset ab initio predictions for AlN/GaN and AlP/GaP interfaces;Journal of Applied Physics;2013-07-21
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4. Atomic layer epitaxy of AlP and (AlP)n(GaP)n superlattice using ethyldimethylamine alane as a new aluminum source;Applied Surface Science;1999-08
5. Multi-Quantum-Well Effects on Electronic Structures and Optical Properties of GaP/AlP Superlattice;Journal of the Physical Society of Japan;1996-11-15
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