Optical properties and indirect-to-direct transition of GaP/AlP (001) superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.37.898/fulltext
Reference24 articles.
1. X‐point excitons in AlAs/GaAs superlattices
2. Self-interaction correction to the local-density approximation in the calculation of the energy band gaps of semiconductors based on the full-potential linearized augmented-plane-wave method
3. Band Structure of Semiconductor Superlattices with Ultrathin Layers (GaAs)n/(AlAs)nwithn=1, 2, 3, 4
4. Effects of alloying and hydrostatic pressure on electronic and optical properties of GaAs-Al_{x}Ga_{1-x}As superlattices and multiple-quantum-well structures
5. Effects of the layer thickness on the electronic character in GaAs‐AlAs superlattices
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