Growth of GaInAs(P)/InP heterostructures on nonplanar substrates using MOMBE (CBE)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Growth of highly uniform InP/GaInAs/GaInAsP heterostructures by MOMBE for device integration
2. High speed waveguide-integrated photodiodes grown by metal organic molecular beam epitaxy
3. Surface selective growth of GaInAsP heterostructures by metalorganic MBE
4. Selective and non-planar epitaxy of InP, GaInAs and GaInAsP using low pressure MOCVD
5. Selective area growth for opto-electronic integrated circuits (OEICs)
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Overgrowth of submicron-patterned surfaces for buried index contrast devices;Semiconductor Science and Technology;2000-03-08
2. Dopant incorporation behaviour during MOMBE growth of InP on (1 0 0), {1 1 1} and nonplanar surfaces;Journal of Crystal Growth;1998-06
3. Lateral coupling of InP/GaInAsP/InP structures by selective area MOMBE;Journal of Crystal Growth;1997-05
4. Concepts for Lateral III–V Heterostructures Fabricated by Surface Selective Growth in MOMBE;Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates;1995
5. Selective area growth of III/V materials in metalorganic molecular beam epitaxy (chemical beam epitaxy);Journal of Crystal Growth;1994-03
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