GaInAs / GaAsP buffer layers for low temperature grown GaAs on Si substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Determination of in-depth thermal strain distribution in Molecular Beam Epitaxy GaAs on Si
2. Low Threading Dislocation Density GaAs on Si(100) with InGaAs/GaAs Strained-Layer Superlattice Grown by Migration-Enhanced Epitaxy
3. Dislocation generation of GaAs on Si in the cooling stage
4. Stress‐free GaAs grown on Si using a stress balance approach
5. Composition effects in the growth of Ga(In)AsyP1-y alloys by MBE
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Relaxation behavior of undoped InxGa1−xP 0.5;Journal of Applied Physics;1996-09-15
2. Atomic layer molecular beam epitaxy growth of GaAs1−xPx layers: Study of P2 incorporation by the reflectance difference technique;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1995-01
3. Determination of the deformation potentials of GaAs0.80P0.20;Journal of Applied Physics;1994-08
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