Determination of the deformation potentials of GaAs0.80P0.20
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357653
Reference10 articles.
1. Material parameters of In1−xGaxAsyP1−yand related binaries
2. GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
3. Atomic layer molecular beam epitaxy (Almbe) of III?V compounds: Growth modes and applications
4. GaInAs / GaAsP buffer layers for low temperature grown GaAs on Si substrates
5. Application of Reflectance Difference Spectroscopy (RDS) to Migration-Enhanced Epitaxy (MEE) Growth of GaAs
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