GaxIn1−xP Liquid phase epitaxial growth on (001), (111)a, and (111)b GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. Luminescence, laser, and carrier‐lifetime behavior of constant‐temperature LPE In1−x Gax P (x=0.52) grown on (100) GaAs
2. Successful liquid phase epitaxial growth and optically pumped laser operation of In0.5Ga0.5P–Ga0.4Al0.6As double‐heterostructure material
3. Room‐temperature heterojunction laser diodes from vapor‐grown In1−xGaxP/GaAs structures
4. GaxIn1−xP−GayAl1−yAs heterojunction close−confinement injection laser
5. Optically pumped laser action at 77 K in GaAs/GaInP double heterostructures grown by molecular beam epitaxy
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