Ellipsometric study of surface treatments carried out on {100} InP inside A VPE reactor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. Growth of III–V semiconductors by molecular beam epitaxy and their properties
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5. A method for the VPE growth of n+-n--n+ InP layers
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1. AES, EELS and TRIM simulation method study of InP(100) subjected to Ar+, He+and H+ions bombardment.;EPJ Web of Conferences;2012
2. Electrical Characterization and Electronic Transport Modelization in the InN/InP Structures;Sensor Letters;2009-10-01
3. Growth study of thin indium nitride layers on InP (100) by Auger electron spectroscopy and photoluminescence;Journal of Crystal Growth;2009-04
4. Passivation of InP(100) substrates: first stages of nitridation by thin InN surface overlayers studied by electron spectroscopies;Surface and Interface Analysis;2005
5. Kinetic study of Si incorporation in InP by the hydride vapour phase epitaxy;Journal of Crystal Growth;1998-09
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