Passivation of InP(100) substrates: first stages of nitridation by thin InN surface overlayers studied by electron spectroscopies-Reference-Cited by-同舟云学术

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Passivation of InP(100) substrates: first stages of nitridation by thin InN surface overlayers studied by electron spectroscopies

Published:2005 Issue:7 Volume:37 Page:615-620
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Petit M.,Robert-Goumet C.,Bideux L.,Gruzza B.,Matolin V.,Arabasz S.,Adamowicz B.,Wawer D.,Bugajski M.

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference20 articles.

1. Physics of Semiconductor Devices (2nd edn). John Wiley: New York, 1981.

2. Nitridation of an InP(001) surface by nitrogen ion beams

3. Rb- and K-promoted nitridation of cleaved GaAs and InP surfaces at room temperature

4. GaP, GaAs, and InP nitridation at room temperature by N2 adsorption on (110) surfaces modified by alkali metals

5. III–V surface plasma nitridation: A challenge for III–V nitride epigrowth

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SEM and XPS studies of nanohole arrays on InP(100) surfaces created by coupling AAO templates and low energy Ar+ ion sputtering;Surface Science;2009-10

2. Interaction of hydrogen with InN thin films elaborated on InP(100);Surface Science;2007-09

3. Combined EELS, LEED and SR-XPS study of ultra-thin crystalline layers of indium nitride on InP(100)—Effect of annealing at 450°C;Applied Surface Science;2007-02

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