3-D Magnetic field sensor realized as a lateral magnetotransistor in cmos technology-Reference-Cited by-同舟云学术

3-D Magnetic field sensor realized as a lateral magnetotransistor in cmos technology

Published:1990-06 Issue:1-3 Volume:22 Page:770-775
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Ristić L.J.,Doan M.T.,Paranjape M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Monolithic integrated Hall devices in silicon circuits;Randhawa;Microelectron. J.,1981

2. Differential amplification magnetic sensor;Takamiya;IEEE Trans. Electron Devices,1972

3. A metal-oxide semiconductor (MOS) Hall element;Gallagher;Solid-State Electron.,1966

4. Magnetotransistor incorporated in an integrated circuit;Davies;Proc. IREE Aust,1971

5. Sensitivity limits in SOS magnetodiodes;Lutes;IEEE Trans. Electron Devices,1980

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