Low-temperature silicon direct bonding and interface behaviours

Author:

Jiao Jiwei,Lu Deren,Xiong Bin,Wang Weiyuan

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. R.F. Wolffenbuttel and K.D. Wise, Bulk-micromachined through-wafer interconnect for silicon wafer-to-wafer bonding, Tech. Digest, 7th Int. Conf. Solid-State Sensors and Actuators (Transducers '93), Yokohama, Japan, 7–10 June, 1993, pp. 194–197

2. Low-temperature electro-static silicon-to-silicon seals using sputtered borosilicate glass;Brooks;J. Electrochem. Soc.,1972

3. J.B. Lasky, S.R. Stiffler, F.R. White and J.R. Abernathy, Silicon-on-insulator (SOI) by bonding and etch-back, Tech. Digest, IEEE Int. Electron Devices Meet., Washington, DC, USA, Dec. 1985, pp. 684–687

4. Tensile strength characterization of low-temperature fusion-bonded silicon wafers;Muller;J. Micromech. Microeng.,1991

5. J. Jiao, D. Lu, T. Sun, H. Wu and W. Wang, Silicon direct bonding at low temperature near the boiling point of water, Proc. 2nd Int. Symp. Semiconductor Wafer Bonding Science Tech. Appl., Honolulu, HI, USA, May 1993, pp. 75–78

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