Low-Temperature Formed Quaternary NiZrSiGe Nanocrystal Memory
Author:
Publisher
Elsevier BV
Subject
Electrochemistry
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1. Tunneling oxide engineering by ion implantation of nitrogen for 3D vertical silicon pillar SONOS flash memory
2. First Detection of Single-Electron Charging of the Floating Gate of NAND Flash Memory Cells
3. A Novel Ion-Bombarded and Plasma-Passivated Charge Storage Layer for SONOS-Type Nonvolatile Memory
4. Charge Storage Characteristics of Pi-Gate Poly-Si Nanowires TaN-Al2O3-Si3N4-SiO2-Si Flash Memory
5. High-performance organic nano-floating-gate memory devices based on graphite nanocrystals as charge-trapping elements and high-k Ta2O5 as a controlled gate dielectric
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