Charge Storage Characteristics of Pi-Gate Poly-Si Nanowires TaN-Al2O3-Si3N4-SiO2-Si Flash Memory-Reference-Cited by-同舟云学术

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Charge Storage Characteristics of Pi-Gate Poly-Si Nanowires TaN-Al2O3-Si3N4-SiO2-Si Flash Memory

Published:2012-09 Issue:9 Volume:7 Page:8648-8658
ISSN:1452-3981
Container-title:International Journal of Electrochemical Science
language:en
Short-container-title:International Journal of Electrochemical Science

Author:

Lin Yu-Hsien,Wu Yung-Chun,Hung Min-Feng,Chen Jiang-Hung

Publisher

Elsevier BV

Subject

Electrochemistry

Reference18 articles.

1. Introduction to flash memory

2. A Novel Nanowire Channel Poly-Si TFT Functioning as Transistor and Nonvolatile SONOS Memory

3. Electrochem;Liu;Solid-state Lett.,2007

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Temperature Formed Quaternary NiZrSiGe Nanocrystal Memory;International Journal of Electrochemical Science;2015-08

2. Plasma-Enhanced Storage Capability of SONOS Flash Memory;International Journal of Electrochemical Science;2013-05

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