Layer-controlled band alignment, work function and optical properties of few-layer GeSe-Reference-Cited by-同舟云学术

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Layer-controlled band alignment, work function and optical properties of few-layer GeSe

Published:2017-08 Issue: Volume:519 Page:90-94
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Song Xiufeng,Zhou Wenhan,Liu Xuhai,Gu Yu,Zhang Shengli

Funder

National Natural Science Foundation of China

Natural Science Foundationof Jiangsu Province of China

ChinaPostdoctoral Science Foundation funded project

Fundamental Research Fundsfor the Central Universities

PAPD of Jiangsu Higher Education Institutions

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference39 articles.

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2. Intercalating graphene with clusters of Fe3O4 nanocrystals for electrochemical supercapacitors;Ke;Mater. Res. Express,2014

3. Atomically thin MoS2: a new direct-gap semiconductor;Mak;Phys. Rev. Lett.,2010

4. Black phosphorus field-effect transistors;Li;Nat. Nanotechnol.,2014

5. Graphene and boron nitride lateral heterostructures for atomically thin circuitry;Levendorf;Nature,2012

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2. Chemically tuned intermediate band states in atomically thin Cu _x GeSe/SnS quantum material for photovoltaic applications;Science Advances;2024-04-12

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