Polarization Anisotropy of Ultrafast Electronic Dynamics in AB‐Stacked Rhenium Disulfide

Author:

Qin Yulu1ORCID,Wang Rui1,Zhang Jianing1,Zhang Yeqinbo1,Wang Yunkun1,Li Xiaofang1,Gao Yunan1,Peng Liang‐You1,Gong Qihuang123,Liu Yunquan123ORCID

Affiliation:

1. State Key Laboratory for Mesoscopic Physics Frontiers Science Center for Nano‐Optoelectronics School of Physics Peking University Beijing 100871 China

2. Peking University Yangtze Delta Institute of Optoelectronics Nantong Jiangsu 226010 China

3. Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan Shanxi 030006 China

Abstract

AbstractRevealing transient electronic properties in anisotropic 2D materials is a prerequisite for developing ultrafast optoelectronic functional devices. Here, the ultrafast electronic dynamics of polarization anisotropy for the AB‐stacked rhenium disulfide (ReS2) are studied using time‐ and energy‐resolved photoemission electron microscopy. The ultrafast electronic relaxation process exhibits sensitive layer‐dependent polarization anisotropy. The linear dichroism of the ultrafast electronic dynamics is also measured, indicating that the polarization anisotropy is determined by the fast process on the sub‐picosecond scale. With ab initio theory calculations, it is confirmed that the ultra‐sensitive layer dependence of the lifetime of the fast process originates from a stronger interlayer coupling in the K‐Γ direction (along the b‐axis) of ReS2. Further, by analyzing the time‐resolved photoemission energy spectrum, distinct “fast” and “slow” regimes are found in the ultrafast dynamics of excited electrons with different energies. The corresponding energy windows also show substantial polarization anisotropy, which is associated with the linear dichroism of the electron‐phonon coupling in the AB‐stacked ReS2. This work has implications for the design of angle‐sensitive optoelectronic functional devices with the AB‐stacked ReS2.

Funder

National Natural Science Foundation of China

Publisher

Wiley

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