Defect studies for the development of nano-scale silicon diffusion simulators
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference29 articles.
1. Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2
2. Modeling of Si self-diffusion in SiO2: Effect of the Si/SiO2 interface including time-dependent diffusivity
3. Correlated diffusion of silicon and boron in thermally grown SiO2
4. Experimental Evidence of the Vacancy-Mediated Silicon Self-Diffusion in Single-Crystalline Silicon
5. A physical model for boron penetration through thin gate oxides from p/sup +/ polysilicon gates
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1. Quantification of point and line defects in Si0.6Ge0.4 alloys with thickness variation via optical pump-THz probe measurement;Applied Surface Science;2020-05
2. Model Calculations of SiC Oxide Growth Rate at Various Oxidation Temperatures Based on the Silicon and Carbon Emission Model;Materials Science Forum;2010-04
3. Silicon isotope superlattices: Ideal SIMS standards for shallow junction characterization;Applied Surface Science;2008-12
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