Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium-Reference-Cited by-同舟云学术

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Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium

Published:2009-12 Issue:22 Volume:404 Page:4376-4378
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Auret F.D.,Coelho S.M.M.,Myburg G.,Janse van Rensburg P.J.,Meyer W.E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Germanium Silicon: Physics and Materials, Semiconductors and Semimetals Vol. 56, R. Hull, J.C. Bean (Eds.), Academic Press, San Diego, 1999.

2. Irradiation-induced defects in Ge studied by transient spectroscopies

3. Electronic properties of antimony-vacancy complex in Ge crystals

4. Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi

5. Electronic properties of vacancy–oxygen complex in Ge crystals

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1. Electrical characterization of electron beam exposure induced defects in epitaxially grown n-type silicon;WOMEN IN PHYSICS: 6th IUPAP International Conference on Women in Physics;2019

2. Ab␣Initio Study of Aluminium Impurity and Interstitial-Substitutional Complexes in Ge Using a Hybrid Functional (HSE);Journal of Electronic Materials;2016-10-21

3. Silicon Surface Passivation by Sputtered Aluminium Oxide: Influence of Annealing Temperature and Ambient Gas;ECS Solid State Letters;2014-09-23

4. Unexpected properties of the inductively coupled plasma induced defect in germanium;Physica B: Condensed Matter;2014-04

5. Electrical characterization of defects introduced in n-Ge during electron beam deposition or exposure;Journal of Applied Physics;2013-11-07

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