Mechanisms of changes of hole concentration in Al-doped 6H-SiC by electron irradiation and annealing-Reference-Cited by-同舟云学术

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Mechanisms of changes of hole concentration in Al-doped 6H-SiC by electron irradiation and annealing

Published:2009-12 Issue:23-24 Volume:404 Page:4755-4757
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Matsuura Hideharu,Yanagisawa Hideki,Nishino Kozo,Myojin Yoshiko,Nojiri Takunori,Matsuyama Yukei,Ohshima Takeshi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Si Substrate Suitable for Radiation-Resistant Space Solar Cells

2. Decrease in Al acceptor density in Al-doped 4H-SiC by irradiation with 4.6 MeV electrons

3. Relationship between defects induced by irradiation and reduction of hole concentration in Al-doped 4H–SiC

4. Mechanisms of Decrease in Hole Concentration in Al-Doped 4H-SiC by Irradiation of 200 keV Electrons

5. Mechanisms of unexpected reduction in hole concentration in Al-doped 4H-SiC by 200 keV electron irradiation

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ferromagnetism induced by vacancies in (N, Al)-codoped 6H-SiC;Solid State Communications;2019-02

2. FLUKA Simulations of DPA in 6H–SiC Reactor Blanket Material Induced by Different Radiation Fields Frequently Mentioned in Literature;Journal of Fusion Energy;2012-03-14

3. Reduction in Majority-Carrier Concentration in Lightly-Doped 4H-SiC Epilayers by Electron Irradiation;Materials Science Forum;2011-03

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