Formation of Frenkel pairs and diffusion of self-interstitial in Si under normal and hydrostatic pressure: Quantumchemical simulation
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Stress effects on defects and dopant diffusion in Si
2. Self- and foreign-atom diffusion in semiconductor isotope heterostructures. I. Continuum theoretical calculations
3. Self- and foreign-atom diffusion in semiconductor isotope heterostructures. II. Experimental results for silicon
4. Intrinsic Point Defects in Silicon: a Unified View from Crystal Growth, Wafer Processing and Metal Diffusion
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1. Effects of annealing on the micro-internal stress induced by interstitial defects in aluminum crystal by molecular dynamics simulations;AIP Advances;2022-02-01
2. Chemical-Pressure-Induced Point Defects Enable Low Thermal Conductivity for Mg2Sn and Mg2Si Single Crystals;ACS Applied Energy Materials;2021-04-22
3. Enhancing the Thermoelectric Performance of Mg2Sn Single Crystals via Point Defect Engineering and Sb Doping;ACS Applied Materials & Interfaces;2020-12-15
4. Control of the Thermoelectric Properties of Mg2Sn Single Crystals via Point-Defect Engineering;Scientific Reports;2020-02-06
5. Surface effects on the Frenkel pair defects stability in the vicinity of the Si(001) surface;Materials Science in Semiconductor Processing;2015-04
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