Defect structure of zinc doped silicon studied by X-ray diffuse scattering method
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. An effective infrared-visible conversion technique for remote quantitative measurements of thermal fields
2. SEM–EBIC investigation of silicon, compensated by zinc during high temperature diffusion annealing
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5. Diffusion in Semiconductors;Boltaks,1963
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Defect structure and properties of Zn diffusion doped Si after swift Xe ion irradiation;Journal of Physics: Conference Series;2019-05-01
2. AFM and SEM investigation of a Zn-doped silicon surface;Bulletin of the Russian Academy of Sciences: Physics;2011-09
3. Defect structure in Zn+ implanted Si: HRXRD study;physica status solidi (a);2011-01-03
4. An electron diffraction and high-resolution transmission electron microscopy study of defect structure in silicon doped with transition metal impurities;Bulletin of the Russian Academy of Sciences: Physics;2010-07
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