An electron diffraction and high-resolution transmission electron microscopy study of defect structure in silicon doped with transition metal impurities-Reference-Cited by-同舟云学术

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An electron diffraction and high-resolution transmission electron microscopy study of defect structure in silicon doped with transition metal impurities

Published:2010-07 Issue:7 Volume:74 Page:1024-1026
ISSN:1062-8738
Container-title:Bulletin of the Russian Academy of Sciences: Physics
language:en
Short-container-title:Bull. Russ. Acad. Sci. Phys.

Author:

Arkharova N. A.,Grigor’ev Yu. V.,Privesentsev V. V.

Publisher

Allerton Press

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.3103/S1062873810070294.pdf

Reference6 articles.

1. Yakimov, E.B. and Privezentsev, V.V., J. Mater. Sci.: Mater. Electron, 2008, vol. 19, p. 277.

2. Scherbachev, K.D. and Privezentsev, V.V., J. Phys. B: Condens. Matter, 2009, vol. 404, p. 4630.

3. Vainshtein, B.K., Strukturnaya Elektronografiya (Structural Electronography), Moscow: Fizmatgiz, 1956.

4. Shindo, D. and Oikawa, T., Analiticheskaya prosvechivayushchaya elektronnaya mikroskopiya (Analytical Electron Microscopy for Materials Science), Berlin: Springer, 2002; Moscow: Tekhnosfera, 2006.

5. Burbaev, T.M., Kurbatov, V.A., Pogosov, A.O., et al., Fiz. Tverd. Tela, 2004, vol. 46, p. 74 [Sov. Phys. Solid State (Engl. Transl.), 2004, vol. 46, p. 71].

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