Defect structure and properties of Zn diffusion doped Si after swift Xe ion irradiation

Abstract

Abstract The electronic and optical properties of Si doped by Zn diffusion have been studied for a long time. Recently the defect structure and properties of n-Si (111) compensated by Zn during high-temperature diffusion annealing with subsequent quenching were investigated. The large-scale rod-like defects with μ-sizes have been observed. These defects were connected with Zn precipitates or/and dislocations. In the present paper we study the modification of defect structure and properties of Zn diffusion doped Si after swift heavy ion (SHI) irradiation. The SHI irradiation is known to lead to the formation of latent tracks (nanometer-sized disordered regions around ion trajectory) in many semiconductor and oxide crystals. It was established that the craters with a size of about 100nm surrounded by hillocks are fixed on the Si surface. The traces of dislocation group along Xe ion beam direction were revealed on Si surface. The small-angle boundaries and interstitial-type planar defects have appeared. After Xe ion irradiation with a fluence of 5×1012 cm−2 the number of radiating centres in dislocation core increasing so, that increasing the dislocation-related luminescence (DRL) from the lines D1 and D2. When the Xe ion irradiation fluence is increased to a value of 1×1014 cm−2 the DRL in the Si sample is almost extinguished.