Electrical properties and deep traps spectra in AlGaN films with nitrogen and gallium polarities prepared by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Electrical properties and deep traps spectra in AlGaN films with nitrogen and gallium polarities prepared by molecular beam epitaxy

Published:2009-12 Issue:23-24 Volume:404 Page:4870-4872
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Protasov D.Yu.,Tereshchenko O.E.,Zhuravlev K.S.,Polyakov A.Y.,Smirnov N.B.,Govorkov A.V.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. The Blue Laser Diode;Nakamura,1997

2. 30-W/mm GaN HEMTs by Field Plate Optimization

3. Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates

4. Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate

5. The direct influence of polarity on structural and electro-optical properties of heteroepitaxial GaN

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma-Induced Damage and Recovery on Au/n-GaN Schottky Diode in Different Processes;Japanese Journal of Applied Physics;2012-07-01

2. Plasma-Induced Damage and Recovery on Au/n-GaN Schottky Diode in Different Processes;Japanese Journal of Applied Physics;2012-06-26

3. TEM study of defects in AlxGa1−xN layers with different polarity;Journal of Crystal Growth;2012-01

4. Dependences of the optical characteristics of Al x Ga1−x N films on the substrate composition and polarity;Optoelectronics, Instrumentation and Data Processing;2011-10

5. Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes;Journal of Applied Physics;2011-06

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