Compensating defects in Si-doped AlN bulk crystals-Reference-Cited by-同舟云学术

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Compensating defects in Si-doped AlN bulk crystals

Published:2007-12 Issue: Volume:401-402 Page:323-326
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Irmscher K.,Schulz T.,Albrecht M.,Hartmann C.,Wollweber J.,Fornari R.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

2. Theoretical investigation of native defects, impurities, and complexes in aluminum nitride

3. First-principles calculations for defects and impurities: Applications to III-nitrides

4. DX-center formation in wurtzite and zinc-blendeAlxGa1−xN

5. Stability of deep donor and acceptor centers in GaN, AlN, and BN

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1. Defects and doping in ultra-wide band gap (Al,Ga)N and β-(Al,Ga)2O3 alloys;Journal of Materials Research;2024-08-12

2. On the Ge shallow-to-deep level transition in Al-rich AlGaN;Journal of Applied Physics;2021-08-07

3. The nature of the DX state in Ge-doped AlGaN;Applied Physics Letters;2020-06-01

4. Blue emission in photoluminescence spectra of the red phosphor CaAlSiN3:Eu2+ at low Eu2+ concentration;Journal of Applied Physics;2018-04-28

5. High temperature electrical transport study of Si-doped AlN;Superlattices and Microstructures;2016-10

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