Interfacial characteristics of single layer semiconductor WS2 (SnS2) film and Ag film-Reference-Cited by-同舟云学术

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Interfacial characteristics of single layer semiconductor WS2 (SnS2) film and Ag film

Published:2023-10 Issue: Volume:667 Page:415191
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Zhang Duo,Chen Li,Yang Maoyou,Wang Junmei,Mi Zhishan,Shi Jiakuo,Su Shuo,Hou Weimin,Wu Hongping

Funder

Qilu University of Technology

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference51 articles.

1. Flexoelectric properties of multilayer two-dimensional material MoS2;Hirakata;J. Phys. D Appl. Phys.,2022

2. Mechanism, material, design, and implementation principle of two-dimensional material photodetectors;Yang;Nanomaterials,2021

3. Phenomenological modeling of confined phonon states in TMD quantum dots;Fang;MRS Adv,2018

4. Role of secondary etching of silicon nanowires towards quantum confinement effect;Sahoo;Superlattice. Microst.,2021

5. Quantum valley Hall effect and perfect valley filter based on photonic analogs of transitional metal dichalcogenides;Bleu;Phys. Rev. B,2017

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