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Defects in SiC

Published:2003-12 Issue: Volume:340-342 Page:15-24
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Janzén E,Ivanov I.G,Son N.T,Magnusson B,Zolnai Z,Henry A,Bergman J.P,Storasta L,Carlsson F

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Photoluminescence of Radiation Defects in Cubic SiC: Localized Modes and Jahn-Teller Effect

2. Photoluminescence of Radiation Defects in Ion-Implanted6HSiC

3. Nitrogen donors in 4H‐silicon carbide

4. Photothermal ionization spectroscopy of shallow nitrogen donor states in 4H–SiC

5. Infrared absorption spectra of 4H silicon carbide

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoelectric Characteristics of SiC/Si Heterostructures;Journal of Applied Spectroscopy;2023-11

2. Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress;Materials;2022-11-19

3. Investigation of deep levels in semi-insulating vanadium-doped 4H-SiC by photocurrent spectroscopy;Physics Letters A;2021-07

4. Effect of thermal annealing on the defects and electrical properties of semi-insulating 6H-SiC;Journal of Crystal Growth;2020-02

5. D–T Neutron and 60Co-Gamma Irradiation Effects on HPSI 4H-SiC Photoconductors;IEEE Transactions on Nuclear Science;2018-01

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