Effect of potential and doping profiles on excitation of stimulated THz emission of SiGe/Si quantum-well structures-Reference-Cited by-同舟云学术

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Effect of potential and doping profiles on excitation of stimulated THz emission of SiGe/Si quantum-well structures

Published:2003-12 Issue: Volume:340-342 Page:831-834
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Altukhov I.V.,Chirkova E.G.,Sinis V.P.,Kagan M.S.,Troeger R.T.,Ray S.K.,Kolodzey J.,Prokofiev A.A.,Odnoblyudov M.A.,Yassievich I.N.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. THz lasing of SiGe/Si quantum-well structures due to shallow acceptors

2. Towards Si1−xGex quantum-well resonant-state terahertz laser

3. Toward a theory of nuclear relaxation in dielectric glasses at ultralow temperatures

4. Resonant States in Strained Semiconductors

5. Population Inversion Induced by Resonant States in Semiconductors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TRANSIENT CHARACTERISTICS OF SiGe/Si QW STRUCTURES AT THz LASING;International Journal of Nanoscience;2007-06

2. Carrier injection as a cause of THz lasing excitation in SiGe/Si QW structures;physica status solidi (b);2007-01

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