TRANSIENT CHARACTERISTICS OF SiGe/Si QW STRUCTURES AT THz LASING-Reference-Cited by-同舟云学术

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TRANSIENT CHARACTERISTICS OF SiGe/Si QW STRUCTURES AT THz LASING

Published:2007-06 Issue:03n04 Volume:06 Page:279-282
ISSN:0219-581X
Container-title:International Journal of Nanoscience
language:en
Short-container-title:Int. J. Nanosci.

Author:

KAGAN M. S.¹,ALTUKHOV I. V.¹,PAPROTSKIY S. K.¹,SINIS V. P.¹,YASSIEVICH I. N.²,KOLODZEY J.³

Affiliation:

1. Institute of Radioengineering and Electronics of RAS, 11-7, Mokhovaya, 125009 Moscow K-9, Russia

2. Ioffe Physico-Technical Institute of RAS, 26, Politekhnicheskaya, 198026 St. Petersburg, Russia

3. University of Delaware, 140 Evans Hall, Newark, DE 19716-3130, USA

Abstract

Transient characteristics of SiGe -QW laser structures were studied. The excitation of stimulated THz emission is shown to be the result of carrier injection through contacts. The mechanism of intra-center population inversion caused by carrier injection is suggested.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Computer Science Applications,Condensed Matter Physics,General Materials Science,Bioengineering,Biotechnology

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0219581X07004729

Reference9 articles.

1. Effect of potential and doping profiles on excitation of stimulated THz emission of SiGe/Si quantum-well structures

2. Resonant states induced by shallow acceptors in uniaxially strained semiconductors

3. Hole transport due to shallow acceptors along boron doped SiGe quantum wells

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