A comparison of extended defect formation induced by ion implantation in (0001) and (112̄0) 4H-SiC-Reference-Cited by-同舟云学术

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A comparison of extended defect formation induced by ion implantation in (0001) and (112̄0) 4H-SiC

Published:2003-12 Issue: Volume:340-342 Page:132-136
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Wong-Leung J,Linnarsson M.K,Svensson B.G

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face

2. Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H–SiC (112̄0)

3. Direct Observation of the Solid-Phase Recrystallization of Self-Implanted Amorphous SiC Layer on (11-20), (1-100), and (0001) Oriented 6H-SiC

4. Electrical activation of implanted phosphorus ions in [0001]- and [11–20]-oriented 4H-SiC

5. Transmission electron microscopy and high-resolution electron microscopy studies of structural defects induced in 6H α-SiC single crystals irradiated by swift Xe ions

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selective Generation of V2 Silicon Vacancy Centers in 4H-Silicon Carbide;Nano Letters;2024-02-13

2. Phosphorus implantation into 4H-SiC at room and elevated temperature;Semiconductor Science and Technology;2021-04-21

3. Structural and electrical studies of partial dislocations and stacking faults in (11‐20)‐oriented 4H‐SiC;physica status solidi (c);2005-04

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