Diffusion of nitrogen in gallium arsenide
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. GaInNAs: a novel material for long-wavelength semiconductor lasers
2. 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers
3. Diffusion of Nitrogen from a Buried Doping Layer in Gallium Arsenide Revealing the Prominent Role of As Interstitials
4. Self-diffusion on the arsenic sublattice in GaAs investigated by the broadening of buried nitrogen doping layers
5. Microstructural characterization of GaN-GaAs alloys grown on (001) GaAs by molecular beam epitaxy
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4. Macroscopic description of the diffusion of interstitial impurity atoms considering the influence of elastic stress on the drift of interstitial species;Philosophical Magazine;2008-04
5. Study of Ion-implanted InSb1-xNx Alloys using Secondary Ion Mass Spectroscopy;2007 IEEE Conference on Electron Devices and Solid-State Circuits;2007
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