Structural and local electrical properties of AlInN/AlN/GaN heterostructures
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Formation Mechanism of Nanotubes in GaN
2. Stress-modulated composition in the vicinity of dislocations in nearly lattice matched AlxIn1−xN/GaN heterostructures: A possible explanation of defect insensitivity
3. The structure of InAlN/GaN heterostructures for high electron mobility transistors
4. Scanning Probe Microscopy: Electrical and Electromechanical Phenomena at the Nanoscale;Kalinin,2007
5. Electrical investigation of V-defects in GaN using Kelvin probe and conductive atomic force microscopy
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