Effects of sapphire annealing on the structural properties of AIN thin films grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors
2. Nitride-based semiconductors for blue and green light-emitting devices
3. Sub-picosecond modulation by intersubband transition in ridge waveguide with GaN∕AlN quantum wells
4. Epitaxially grown AlN and its optical band gap
5. Semiconductor Materials;Berger,1996
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. In-situ thermal cleaning of the sapphire substrate and temperature effect on epitaxial AlN;Vacuum;2022-11
2. Peculiarities of the AlN crystalline phase formation in a result of the electron-stimulated reconstruction transition (√31×√31)R ± 9° − (1 × 1);Applied Surface Science;2021-03
3. Observation of dislocations and their arrays in physical vapor transport-grown AlN single-crystal substrate by synchrotron X-ray topography;Japanese Journal of Applied Physics;2019-05-20
4. Specific features of the formation of terrace-step nanostructures on the (0001) surface of sapphire crystals;Crystallography Reports;2012-11
5. Room temperature deposition of self-assembled Al nanoclusters on stepped sapphire (0001) surface and subsequent nitridation;Thin Solid Films;2011-10
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3